隨著技術(shù)發(fā)展,第三代半導(dǎo)體功率器件開(kāi)始由實(shí)驗(yàn)室階段步入商業(yè)應(yīng)用,未來(lái)應(yīng)用潛力巨大,這些新型器件測(cè)試要求更高的電壓和功率水平,更快的開(kāi)關(guān)時(shí)間。
測(cè)試周期:
根據(jù)標(biāo)準(zhǔn)、試驗(yàn)條件及被測(cè)樣品量確定
產(chǎn)品范圍:
MOSFET、IGBT、DIODE、BJT,第三代半導(dǎo)體器件等分立器件,以及上述元件構(gòu)成的功率模塊
測(cè)試項(xiàng)目:
| 靜態(tài)參數(shù) |
符號(hào) |
| Drain to Source Breakdown Voltage |
BVDSS |
| Drain Leakage Current |
IDSS |
| Gate Leakage Current |
IGSS |
| Gate Threshold Voltage |
VGS(th) |
| Drain to Source On Resistance |
RDS(on) |
| Drain to Source On Voltage |
VDS(on) |
| Body Diode Forward Voltage |
VSD |
| Internal Gate Resistance |
Rg |
| Input capacitance |
Cies |
| Output capacitance |
Coes |
| Reverse transfer capacitance |
Cres |
| Transconductance |
gfs |
| Gate to Source Plateau Voltage |
Vgs(pl) |
| 動(dòng)態(tài)參數(shù) |
符號(hào) |
| Turn-on delay time |
td(on) |
| Rise time |
tr |
| Turn-off delay time |
td(off) |
| Fall time |
tf |
| Turn-on energy |
Eon |
| Turn-off energy |
Eoff |
| Diode reverse recovery time |
trr |
| Diode reverse recovery charge |
Qrr |
| Diode peak reverse recovery current |
Irrm |
Diode peak rate of fall of reverse
recovery current |
dirr/dt |
| Total gate charge |
QG |
| Gate-Emitter charge |
QGC |
| Gate-Collector charge |
QGE |
| 其他參數(shù) |
符號(hào) |
| thermal resistance |
Rth |
| Unclamped Inductive Switching |
UIS |
| Reverse biased safe operating area |
RBSOA |
| Short circuit safe operation area |
SCSOA |